Stress Control for Si3N4 and SiO2 PECVD - Oxford Plasma Technology RIE PECVD Ion Beam Sputtering

Oxford Plasma Technology: Stress Control for Si3N4 and SiO2 PECVD ... Strain control of films is of very high importance for the fabrication of microstructures by bulk and surface micromachining. The key parameter to control the material strain of films d

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